Microwave Road - RF/Microwave GaN technology, Current status and trends
Photo: Chalmers
International workshop between Chalmers and industry on RF/microwave GaN technology — Current status and trends will be held November 11, 1000-1645 @ Chalmers University of Technology.
After ten years of research and development, galliumnitride (GaN) is gaining industrial acceptance as a new RF/microwave semiconductor solution. Silicon, gallium arsenide and vacuum technologies are now being challenged by gallium nitride as an alternative for powerful, robust, energy-efficient and lightweight transceivers from low GHz up to millimeter-wave. As a result, new possibilities open up in engineering of telecom, defense and space systems and infrastructure. Large public-funded programs for GaN in Sweden and Europe are currently being run or finalized. Still however, many issues remain on how to solve reliability and integration for GaN in RF/microwave systems. The full potential for millimeter-wave is still to be answered. This workshop aims to wrap up the current status and trends in GaN for RF/microwave and beyond. Leading industrial and academic actors from Germany, Japan and Sweden will give you both the component and system perspective. Registration at http://www.chalmers.se/mc2/EN/rf-microwave-gan latest on 2 November
Program to download
Welcome!
Jan Grahn, Chalmers, Director GigaHertz Centre (www.chalmers.se/ghz)
Niklas Rorsman, Chalmers, Leader Microwave Wide Bandgap Project
Johan Carlert, Saab Microwave Systems, Chairman Microwave Wide Bandgap Project
Erik-Wilhelm Graef Behm
IT Center West @ Business Region Göteborg
